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半导体照明中结温的电学法测试与优化(2)

时间:2011-08-17 14:34来源:网络(转载) 作者:袁友祥 别少兵 唐伟 点击:
参考文献: [1] 费翔,钱可元,罗毅.大功率LED结温测量及发光特性研究[J].光电子激光,2008,19(2):289-292. [2] Min-Ho Kim,Martin F.Schubert,Qi Dai,et al.Origin of efficiency droop in GaN-based light-emitting
  
  参考文献:
  [1] 费翔,钱可元,罗毅.大功率LED结温测量及发光特性研究[J].光电子·激光,2008,19(2):289-292.
  [2] Min-Ho Kim,Martin F.Schubert,Qi Dai,et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys.Lett,2007,91:183507.
  [3] Lee C Y,Su A,Liu Y C,et al.In situ measurement of the junction temperature of light emitting diodes using a flexible micro temperature sensor[J].Sensors,2009,9(7):5068.
  [4] Xi Y,Xi J Q,Gessmann T,et al.Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods[J].Appl Phys.Lett.,2005,86(3):031907.
  [5] Quan Chen,Xiaobing Luo,Sheng Liu.Junction temperature testing system of LED design and measurement[J].7th China International Forum on Solid State Lighting,2010:313-316.
  [6] Schubert E F.Light Emitting Diodes[M].2nd ed.Cambridge:Cambridge University Press,2006.
 

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